Other Parts Discussed in Thread: LM5060-Q1
Hi,
There was 1.5mA current leakage from LM5069 when the UVLO is 0V,And I want to eliminate it.
Can I add a MOSFET between POWER-GND and LM5069-GND?
I found that there is a similar circuit in LM5050.
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Hi Teddy,
LM5069 device architecture will not support breaking the device path ground. The VDS measurement circuit provides a path to Vout and could leak current from Vin. It is not recommended.
Can you let me now your target IQ_OFF current and Why it is important ?
Best Regards,
Rakesh
Hi Rakesh,
I used LM5069 and LM5050 in power management products in ORing system which has two batteries.Our customers may lay our products aside when there is no need to use them for a long time even though the products have no power.When the power is used up,it is hard to recharge the products.So we want to lower the whole leakage current down to 1mA.The lower the better.
Best Regards,
Teddy
Hi Teddy,
Thanks for the details.
Can you quickly share few more details such as operating voltage, max voltage, max load current to check alternate suitable solutions.
Best Regards,
Rakesh
Hi Rakesh,
operating voltage:48V
max voltage:57.6V
minimum voltage:32V
max load current:55A
When the battery goes to 32V,the power is 0%.But it will overdischarge if the IQ current exsits.
Best Regards,
Teddy