Hi team,
My customer is considering to use LMG1020 for GaN FETdrive.
The customer would like to control the LMG1020 with 3.3V MCU. In this case, customer is worried that a reverse current flows from VDD(5V) to IN- through an internal pull up resister. Therefore, the customer would like to keep the IN- to low level(GND) always, and they would like to drive the GaN FET by inputting 3.3V pulse to IN+. Is this usage acceptable?
According to the LMG1020EVM, the IN- pin is pulled down to the GND. Therefore, I think that the usage that the customer thinks can be used.
Regards,
Yamaguchi