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CSD22205L: Idss at -4VDS, Igss at -4VGS

Toshiro Imi
Expert 7250 points
Part Number: CSD22205L

Hello,

Our customer needs to know the Idss at -4V VDS and Igss at -4V VGS. Could you tell us these number.

best regards,

  • 0
    TI__Mastermind 38270 points

    Hi Imi-san,

    Thanks for promoting TI FETs at your customer. We do not test or spec drain-source and gate-source leakage currents under those conditions. Therefore, I have no data to share. During product development, we collect IGSS and IDSS data for a number of samples under the conditions specified in the datasheet: IGSS is measured at 25C with VDS = 0V & VGS = -6V. IDSS is measured at 25C with VGS = 0V and VDS = -6.4V. In general, this data shows that both IGSS and IDSS are both well below the -100nA limit. However, we can only guarantee the limit in the datasheet (-100nA). Also, both IGSS and IDSS have a positive temperature coefficient meaning the magnitude of leakage current increases with increasing temperature. The effect is much stronger on IDSS as this is a p-n junction and not so much for IGSS as this is the gate oxide barrier.

    From what I have read, VDS has a very small effect on IDSS and VGS also has a very small effect on IGSS. Can you tell me more about the application? Why is the customer concerned with IGSS and IDSS at -4V for VDS and VGS?

  • 0 in reply to John Wallace1
    TI__Mastermind 38270 points

    Hello Imi-san,

    Following up to see if you have any additional questions. I will assume that this adequately answered your questions if I don't hear back in the next day.