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CSD13380F3: the current between Gate and Drain

Part Number: CSD13380F3

Dear all,

I would like to ask about this device.

The following phenomenon was reported by our customers.

As shown in the figure below, when the gate and drain voltages were measured with the source open, the gate was 45 mV and the drain was 0 V.

In addition, the current of 0.227 mA was flowing from the gate to the drain.

Although the leakage current from the gate to the drain is not specified, does such a current value flow when the source is open?

Best Regards,

Y.Ottey

  • Hello Y.Ottey-san,

    Thanks for promoting TI FETs at your customer. I need to look into this further to see if this is expected behavior from the FET. Normally, when we measure leakage currents, no terminal of the FET is left open. For example, we spec gate-source leakage current, IGSS, with drain and source at the same potential (i.e. VDS = 0V) and apply a voltage between gate and source (i.e VGS = 8V). Similarly, we spec drain-source leakage, IDSS, with VGS = 0V and VDS = 9.6V. If the customer wants to measure gate-drain leakage, I would recommend VDS = 0V and apply a voltage between gate and drain. I will update you as soon as I have more information.

  • Hello Y.Ottey-san,

    Following up on my previous response, can you please provide additional details how the measurements are being made? Is the FET mounted on a board and if so, what is the circuitry around the FET? Is it possible that there is another leakage path or an electrical connection to the source of the FET? I have consulted with my colleagues and the measurement does not seem to make sense given the brief description provided in the original posting. Please provide more details.

  • Hello,

    Following up to see if there is anything else needed from TI at this time. I will close out this thread if I do not hear back from you within the next day.

  • Hi Y.Ottey,

    Since I have not heard back from you, I am going to close out this thread. Please respond if it needs to be reopened and investigated further.