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Power Mosfet calculation for 100V@200Amp current rating

Other Parts Discussed in Thread: CSD19536KCS, CSD19536KTT, LM5060, CSD18536KTT, CSD18536KCS

Hi Ti Team, 

I am Abhishek working as a Design engineer in Analog & digital R&D section.

I have one query related to Power Mosfet, I have to control the Output by putting a electronic switch.

Input - 24V@200Amp.(Battery)

Output- 24V@120Amp Continuous, 200Amp Peak current.

I am connecting the input with output by XT150 Connector, But there are some spark is coming while connection, Because load is ESC with BLDC motor.So it will draw approx 5-10 Amp current while connectingh the battery source.

I am planing to put a electronic switch operated with a micro controller having Power mosfet in parallel, which can handle the 200Amp current rating.

Kindly suggest some Power mosfet part no as per solution, Suggest some idea to implement this circuit.

Thanks 

Abhishek Kumar

Design Engineer.

  • Hello Abhishek,

    Thanks for reaching out.

    Do you have a TI part number that you're using or planning on using? I ask so that I can direct your query to the appropriate team as we specialize in gate drivers. 

    From what I gather, you're driving a parallel FETs directly from the controller and that you're not using a gate driver in your design, please confirm. 

    Regards,

    -Mamadou

  • Hi Mamadou,

    Thanks for your reply!.

    Mosfet part no is not finalized yet. Please suggest some suitable part as per our application.

    We are planning to trigger the mosfet gate with microcontroller.

    Is that right approach for reaching the aim.

    Thanks 

    Abhishek kumar

  • Hello Abhishek,

    I am not in a position to comment as I am not an expert in the matter nor can I comment without knowing the TI part you plan on using.

    I will therefore forward the inquiry to the MOSFETs team to suggest possible TI part suitable for your application.

    Regards,

    -Mamadou 

  • Hi Abhishek,

    Thanks for the inquiry. TI has a number of 100V MOSFETs available with a few package options including 5x6 SON, D2PAK and TO220. Are you looking for a surface mount package or a thru-hole package that can be attached to a heatsink? For minimum rds(on) and highest current capability, I would suggest either the CSD19536KTT in D2PAK or the CSD19536KCS in TO220. Both devices use the same silicon MOSFET die. Please note, you must provide a minimum 6V gate drive for these FETs as the minimum VGS = 6V where rds(on) is specified, tested and guaranteed. They will not give you the performance if you drive the FETs with 3.3V, 5V or any voltage < 6V. You will need to parallel multiple devices to reduce conduction loss and spread the heat over a larger surface area with multiple packages.

  • Hi Abhishek,

    I wanted to follow up to see if my previous response answered your questions. If I don't hear back from you in the next day, I will assume your issue is resolved and close out this thread.

  • Hi John, 

    Thanks for your reply!

    I want to make a electronic switch, to control the  100V@200Amp Battery supply(source), and the load in 24V@120Amp continous, peak current 200Amp.

    I need to control this circuit with a microcontroller . Please let me know any circuit fro reference ie we can do that activity.

    When we trigger the mosfet with microcontroller then only the Mosfet will On/Off. 

    Please suggest some reference circuit with isolation.

    Kindly give some reference from where i can take the reference.

    Thanks 

    Abhishek Kumar

  • Hi Abhishek,

    For your application, you want to control the inrush current when making a hot plug connection. You may want to consider a hot swap or high side controller to drive the FETs. One example is the LM5060 high side protection controller. It is designed to drive a high side N-channel MOSFET and can be enabled with your microcontroller. For 24V battery, you're going to probably need at least a 60V N-channel MOSFET. TI's 60V FET with lowest rds(on) is the CSD18536KTT. Maximum on resistance at VGS = 10V, 25degC is 1.6mOhm. Each of these FETs can dissipate a maximum of 4W - 5W of power. For 200A, we can estimate the number of parallel FETs required as follows:

    Per FET ID = sqrt(PD/Ron) = sqrt(4W/(1.6mOhm x 1.7)), where 1.7 is the positive temperature coefficient of on resistance at TJ = 150degC

    Per FET ID = 38.3A

    Number of parallel FETs = 200A/38.3A = 5.2 -> you will need at least 5 or 6 parallel FETs to carry 200A.

    The LM5060 has an excel-based design tool that you can download to complete a design. If you choose to use this controller, the applications team for this device can assist you with your design.

    As an alternative, you can use FETs in a TO220 package and attach them to a common heatsink. The lowest rds(on), 60V FET in TO220 is the CSD18536KCS. It uses the same silicon die as the CSD18536KTT.