LM5113-Q1: Is it not suitable for using GaN with source to drain current flowing?

Yoshiki Ochi

Part Number: LM5113-Q1
Other Parts Discussed in Thread: LM5113

Hi team,

Should GaN use only for drain to source current flowing? Is GaN not suitable for replacing FET in phase shifted full bridge rectifier?

I saw document which descrives GaN. They said that "GaN's third quadrant" leads high drain to source voltage.
I understood that it is not suitable for using GaN in third quadrant condition and it should be use only for drain to source current flowing condition such as bridgeless totem pole PFC. Is this understanding correct or not?

Regards,
Ochi

over 5 years ago

0 Don Dapkus over 5 years ago

TI__Guru**** 189401 points

Hi, Ochi-san,

Can you share a link to the document you were reading?

0 Jeffrey Mueller over 5 years ago

TI__Genius 12990 points

Hi Ochi,

Thanks for reaching out on e2e,

Thats correct, GaN can be used in PSFB. GaN can operate in third quadrant however the losses are greater because GaN lacks a body diode which SiFets have. Therefore we have to limit third quadrant conduction as much as possible with deadtime. GaN can be used with lower losses and higher breakdown voltage in the first quadrant due to a wider band gap and zero reverse recovery.

Check out the app note below on third quadrant conduction.

Also check out EPCs PSFB board EPC9102 featuring LM5113 and EPC2001 GaN Fet.

Thanks,

0 Yoshiki Ochi over 5 years ago in reply to Jeffrey Mueller

TI__Genius 9455 points

Thank you very much!

Power management

Power management forum

LM5113-Q1: Is it not suitable for using GaN with source to drain current flowing?