Other Parts Discussed in Thread: ISO5451, ISO5452, ISO5851
What are the differences between ISO5851, ISO5852S, ISO5451, and ISO5452?
For what applications do the different features matter?
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What are the Shared Features?
ISO5451, ISO5452, ISO5851, ISO5852S are a family of single-channel isolated gate drivers targeting IGBT & SiC applications. They are also offered in AEC-Q100 qualified variants.
These devices are 2.5A/5A single channel isolated gate drivers with 5.7kVrms reinforced isolation
Their shared feature set includes:
How do the differences affect my choice?
The specification differences are detailed in the table below.
ISO5451 | ISO5452 | ISO5851 | ISO5852S | |
Output type | Single | Split-outputs | Single | Split-outputs |
VIORM Max Repetitive Peak voltage |
1420 VPK | 2121 VPK | ||
VIOWM Max Working Voltage |
1420 VDC | 2121 VDC | ||
1000 VRMS | 1500 VRMS | |||
VIOTM Max Transient Isolation Voltage |
8000 VPK | |||
VIOSM Max Surge Isolation Voltage |
6250 VPK | 8000 VPK | ||
Minimum CMTI | 50-kV/μs | 100-kV/μs | ||
Soft turn-off on DESAT Detection |
No | Yes | No | Yes |
AEC-Q100 Available | Yes | |||
Split Outputs
ISO5852S and ISO5452 split the turn-on and turn-off paths while ISO5451 and ISO5851 are single-output drivers.
With split outputs, separate external gate resistors can be used for each path without requiring the addition of a diode. This feature is especially beneficial for driving SiC FETs.
Isolation Ratings
ISO5851 & ISO5852S are rated to withstand higher working and repetitive peak voltages than ISO5451 & ISO5452. The choice depends on the bus voltage in the system.
CMTI
CMTI is an important parameter that affects every switching cycle. ISO5851 and ISO5852S are High-CMTI rated >100kV/us. This effectively increases resiliency against large dv/dt transients caused by hard switching.
Soft turn-off
ISO5452 & ISO5852S have STO on DESAT detection. During a short-circuit event, fast turn-off of the IGBT can cause a spike in VCE due to parasitic inductances. This VCE transient can be large enough to cause failure of the IGBT. STO “softly” pulls the gate low over 2us to prevent damage. STO is most effective when driving high-power IGBTs with longer short circuit withstand times
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