I sincerely thank TI for always responding kindly.
In the meantime, I measured the experiment again through answers and several times of data sheet study.
I entered 400mV voltage into VIN_DC using the power supply. No storage elements were connected to the VSTOR, and it had been discharged at 0V. /EN pin is connected to GND and VSTOR is connected to VOUT_EN pin.
Voltage was applied to the VIN_DC without any element being connected to the VBAT. First, the oscilloscope observed the LBOOST pin switching normally. Measured by a multimeter, the VOUT and VBAT went up as slowly as 0.1 mV as they were charged.
At the same time, however, the VSTOR value remained at 2mV. So I connected the super capacitor with 22F/2.3V specs charged 1.5V to the VBAT. The following measurement results showed that the VSTOR remained at 2 mV and the VOUT slowly increased to 77 mV and then began to fall after connecting.
Despite this situation, it failed to enter main boost activation mode from cold start mode. I wonder if there is any part that I missed when I connected to the board according to the description of the datasheet and Q&A.
1) In cold start mode, the EN pin is described as "don't care," which is confusing whether the EN pin is a "don't care" in High, Low, or JP2 EN pin on the board means "don't care" when connecting to GND or VBAT_SEC. I'd like to hear the exact answer.
2) I suspect that the value of the capacitor connected to the VBAT is too large for the board. Was there a problem with the super capacitor?
3) I would like to know why the value of VSTOR is so small, even though the proper voltage is applied to the VIN_DC.
4) I want to know how to modify the VSTOR value to be larger than VSTOR_CHGEN due to the increase in the VSTOR value.
