I have a question using TINA TI.
I ran the TINA TI program using a similar type BQ25504 instead of BQ25570.
I simulated BQ25504 board through this program and I have some questions. I applied 600 mV to VIN_DC, set the condition to which no storage elements were connected to the VBAT, and tried Transient Analysis.
The results were shown in Figure 1, with VSTOR and VBAT values increasing over time. The question is, what kind of analysis is Transient Analysis, and why am I not able to see this kind of result on a real oscilloscope?
And if the VSTOR and VBAT values increase like this, I want to know if the energy Harvesting Board works properly.
Another question is, I tried DC Transfer Characteristic on DC Analysis. I would like to know exactly what kind of analysis this DC Transfer Characteristic is, unlike the above Transient Analysis method, does not increase the value of VBAT and VSTOR.