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CSD25501F3: Gate resistance and Td spec

Yusuke Mukuno
Expert 7395 points
Part Number: CSD25501F3

Hi Expert,

CSD25501F3 has Gate resistance Rc(10kohm) + Rg(33ohm) between G pin to Gate.

Customer feels, it is too big. they think, the Raising time and the Falling time will become longer than datasheet spec.

Is the following figure correct?

Could you please let me know about Min value and Max value for the following Td parameters?

Thanks

Muk

  • 0
    TI__Mastermind 37950 points

    Hello Muk san,

    Thanks for promoting TI FETs at your customer. The switching times are only measured on samples from 3 lots at characterization during product development and we do not spec or guarantee min or max values. You can find more details under the Support & training tab on the MOSFET landing page on TI.com. Click on Understanding MOSFET data sheets and you will see a link for Switching Parameters. I cannot share the characterization data here but will send you more details in an email.

  • 0 in reply to John Wallace1
    TI__Expert 7395 points

    Hi John-san,

    Thank you for your answer! I received your e-mail. Thanks.

    Could you please give me your comment for 10kohm Gate resistance?

    Muk

  • 0 in reply to Yusuke Mukuno
    TI__Mastermind 37950 points

    Hi Muk san,

    The 10kohm gate clamping resistor allows this device to have an abs max VGS rating of -20V. The gate-source ESD diode acts a zener with a breakdown voltage of ~6V. The 10kohm resistor limits the current and therefore power dissipated in the gate-source clamping diode.