Hello, I'm designing a 150V half-bridge inverter with LMG1210 and EPC2034C transistors.
I have doubts about the bootstrap capacitor calculation. The datasheet proposes the use of the following formula:
(0.5 nC + Qrr + QgH + IHB × ton)/ΔV = CBST,min,
where IHB is the quiescent current of the high-side driver when the transistor is ON (multiplied by Ton). However, on the datasheet only the quiescent current when the high-side is off (HI=0V) is provided (IHB max 850µA, section 6.5 of datasheet).
- Is the quiescent current the same when the high-side is on ? (total current = quiescent (same as when off) + current related to Qrr and QgH).
- Or do we have to consider the gate to source forward leakage of the transistors (Igss)?
Thank you for your help!