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LM5161: Drain current and OVP function

Part Number: LM5161

Hi team,

 

Please let me confirm the below

-       Could you share the drain current of internal FET ?
Customer has concerned about the situation that something over load was happened.
They understand that LM5161 goes shut down by OCP but they would like to know the abs drain current since over current situation is kept during the delay time to shutdown.

 

-       Does LM5161 have OVP function ?

 

Thank you and best regards,

Michiaki

  • Hi,

    If you mean current limit, yes it has a high-side 1.6A current limit. As to OVP, at which point you need the protection?

  • Hello Iven,

    No customer just would like to know the drain current of internal mosfet.

    Could you share it ?

     

    Regarding OVP function, please just let me know if there is the OVP function or not.

     

    Thank you and best regards,

    Michiaki

  • Hi,

    The internal MOSFET current capability is related to process and we don't have this data for release. Regarding OVP function, if you mean output voltage protection, we don't have this spec in datasheet.

  • Hi Iven,

     

    Their background of the inquiry for drain current is that they have concerned about break down due to the delay time until shut down by over current triggered.

    Since the response time of high-side current limit is 100ns and we’ve tested enough, we can compensate internal high side FET doesn’t go break down at any over load condition.

    Is my understanding correct ?

     

    I would much appreciate if you will provide any comments.

     

    Thank you and best regards,

    Michiaki

  • Hi,

    It's actually related to your input voltage and inductor, if the design values are reasonable and inductor is not going to saturation, the current increase in 100ns is little (100Vin with 100uH inductor, the increase is not more than 100mA).