Hi,
I have a design where a 3.3V LDO is directly connected to a Lithium Ion battery in an embedded device. The device will be used 2min per day so quiescient/idle current is key.
The issue is that when the LDO input voltage is close to its supposed output voltage (LDO drop-out zone), the quiescient current is skyrocketting: The EN pin is tied to the battery voltage.I also tried with a competitor reference, I do have the same behavior:
Vbattery (Vin) | Ibat (Iin) |
TLV75533 | |
2.8V | 136µA |
3.0V | 146µA |
3.2V | 154µA |
3.4V | 22µA |
3.6V | 22µA |
COMPETITOR | |
2.8V | 209µA |
3.0V | 222µA |
3.2V | 273µA |
3.4V | 1.7µA |
3.6V | 1.7µA |
- I feel like I'm missing something about the inner element inside the LDO that is leaking out in such condition, can you enlight me?
- Is there alternative LDO architecture that can be suitable for my application ? (relatively low Iq from 2.8V to 4.2V)
Thanks,
Thibault