CSD17381F4: Source-Gate diode specification

Gary Jiang

Part Number: CSD17381F4

Hi team,

My customer want to use CSD17381F4 but he wants to know the IV curve of diode between source and gate. Do we have this data?

Besides, they want to know if this chip have special requirements for soldering conditions?

Thank you!

over 5 years ago

0 John Wallace1 over 5 years ago

TI__Mastermind 38180 points

Hi Gary,

Thanks for promoting TI FETs at your customers. I was able to find the attached curves for the G-S ESD diode. This is for a typical devices at 25degC. Please see the FemtoFET surface mount guidelines document:

ESD_Diode.pdf

0 Gary Jiang over 5 years ago in reply to John Wallace1

TI__Intellectual 980 points

Hi John,

Thank you for your material.

Customer now needs to apply a -0.6V to Gate-Source in series 4.7k ohm resistor limiting forward current. Can our ESD diode endure this current?

Thank you!

Gary

0 John Wallace1 over 5 years ago in reply to Gary Jiang

TI__Mastermind 38180 points

Hi Gary,

Thanks for the question. This should not be a problem. The forward drop of the G-S ESD diode is typically about 0.74V at 1mA & 25degC. I don't have the forward bias characteristics (i.e. VGS < 0V) but with only 0.6V, the current will be very small as will the power dissipation. There is a maximum continuous gate clamp current specified at 35mA which limits the power dissipation to 0.5W (zener voltage is ~14V).

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CSD17381F4: Source-Gate diode specification