Hello,
For my BMS design, I've used 10k ohm resistors for the CHG/DSG gate drive pins as mentioned in the BQ40Z80 datasheet. I've also used BSO033N03MS as my protection MOSFETs. I've only recently discovered that under extreme short circuit conditions (~1000 amps) the MOSFET seems to burn off before the BQ40Z80 can respond.
In my next iteration I'll probably use stronger MOSFETs, but for now I'm wondering if by lowering the 10k gate resistor I could maybe reduce the short circuit response time. In the EVM schematic TI used 1k and 4k resistors, and I can see in the pin equivalent circuit that there is an internal 2k resistor at the pin output as well.
So my question is how low of a gate resistor can I use in series to the CHG/DSG pin? I assume it's depended on the pin's max sink current but I'm not sure what is the max allowed from the datasheet.
I'm using the BMS mostly for 3S-6S Li-Ion applications.