Other Parts Discussed in Thread: BQSTUDIO
Hello, we are using BQ78350-R1 device with R2-firmware. Please find my questions below regarding CC calibration section 12.2.5 in TRM
- R2-FW changes: Are there changes in calibration related functions in R2 firmware? I noticed Capacity gain has the same value as CC gain when I perform calibration using BQ studio, but TRM has relation: Capacity Gain = CC Gain * 298261.6178, can you confirm which is correct value to write in for Capacity gain calibration for R2-FW
- Coulomb Counter Offset Samples: What does this parameter do? Does it change during the calibration process or is it fixed value and can be read anytime? There is no explanation in TRM regarding this parameter.
- After enabling raw ADC data 2 using 0xF082, if data flash parameter Coulomb Counter Offset Samples is read will it stop raw ADC output? Or I can read this before enabling raw ADC? This is related to my previous question
- Is there a timeout for CALIBRATION mode to disable calibration? or it's only changed based on command 0x002D?
- Is it possible to calibrate CC Gain/ Capacity gain with a calibrated shunt emulator? If yes then, can we skip step 5 of section 12.2.5.2 in TRM to enable FETs?
- Section 12.2.5.2 step 10: Can you confirm ADCcc is FCALcc from step 7. Also, the Coulomb Counter Offset Samples is same and does not have to be read again if this is known from CC offset calibration.