Other Parts Discussed in Thread: EV2400, BQSTUDIO, BQ34Z100
Hi, I am modifying the design energy, design capacity registers. I have previously updated the ev2400, the regulator aaas1117, output voltage 3.3 current 1 A to supply the Regin and CE pins; the Bat pin is powered by another voltage source with a 4 volt reference.
at the time of changing the design energy, design capacity registers the bqstudio presents the following error to read of data written failed comparison this error is usually associated with the parameter dataflash update ok cell volt in my case it is set to 1000 mV.
What is the current consumed by the bq34z100 G1 at the time of writing the internal memory?
The type of regulator implemented aaas1117 if it meets the current characteristics or should I implement a regulator of the texas instrument?
what is the cause of the error a read of data written failed comparison
thanks for attention paid
a read bq34z100g1.gg.csv
