Hi Sir,
Pls kindly reference as below customer schematic.
O/P will have 6ms delay after EN, what will possible cause it?
Thanks, Ian.
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Hi Sir,
Pls kindly reference as below customer schematic.
O/P will have 6ms delay after EN, what will possible cause it?
Thanks, Ian.
Hi Ian,
It will have to confirm with design, but it looks like this part has an internal charge pump. If is not shown in the block diagram nor described in the datasheet, but the block diagram shows that the device is using a NMOS as the pass element:
To support a VDO of <=400mV, there must a charge pump for the internal gate bias supply. It could be that the reason the plot in the PDS showing a faster startup from just the EN pin vs VIN and the EN pin could be that the charge pump needs to startup and raise the internal bias rails to properly modulate the gate of the NMOS.
Does this help to clarify? Also, it looks like the current limit is being hit during startup. How much capacitance is at COUT?