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Original question:

LM66100: LM66100 Vin transistor leakage problem

LM66100: LM66100

Lionel DUAN
Prodigy 10 points
Part Number: LM66100

I met the same problems. I am using same oring mode with above schematic.

the different is, I found, when the Vout is higher than Vin 0.6V, LM66100 could turn of instead of 80mV.

Another one interesting is, if power on Vout first, then power on Vin, this chip is off. it could be understood, CE is pull high if power on Vout first.

if power on Vin first, then power on Vout, it can not turn off until Vout-Vin higher than 0.6V.

last point, I cannot understand of the spec,  what does Vfwd means, does this mean Vce> 0.1V to 1.1V? what's the relationship with Vfwd?

can you help please?

  • 0
    TI__Mastermind 32650 points

    Hi Lionel,

    Firstly, you image does not show up on E2E.

    Vfwd refers to the forward voltage on the body diode. I do not believe this does not have a relationship with CE and is just the characteristic of the body diode.

    Can you please share your waveforms? What is the reverse current that flow before the device turns off? Note that if the device is ON, 0.5A of reverse current has to flow before RCB is triggered. This lines up to a 80mV difference across the FET at max.