This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

LM74700-Q1: the reason why Vds limit is existed

Part Number: LM74700-Q1

Hi team,

My customer has a question about LM74700-Q1.

You can see following statement on the datasheet.

The next criterion is that the absolute maximum rating of Anode to Cathode reverse voltage of the LM74700-Q1 (–75 V) and the maximum VDS rating MOSFET are not exceeded. In the design example, 60-V rated MOSFET is chosen and maximum limit on the cathode to anode voltage is 60 V.

the reason why you need to choose lower VDS rated MOSFET is to avoid IC broken before MOSFET is broken, is my understanding correct?

If higher VDS MOSFET is used and the voltage between anode and cathode will not be higher than max rating of IC, do you think some problem occur?

best regards,

Takuya

  • Hi Takuya,

    Even if we choose higher VDS rated MOSFET, the Cathode to Anode voltage should be limited below 75V (as per the device abs max spec) for ISO pulse-1 test. So, there is no advantage in using higher VDS rated MOSFET. But at the same no problem if you use higher VDS rated MOSFET.

    Best Regards, Rakesh