Has TI characterized the erase/write endurance cycles and data retention for the internal EEPROM in the TPS544C20?
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Has TI characterized the erase/write endurance cycles and data retention for the internal EEPROM in the TPS544C20?
Electronic Erasable Programmable, Read Only Memory (EEPROM) used for user value storage in the TPS544x20 family is rated for > 100,000 data retention at 150C and >1,000 Erase/Write cycles at 150C die temperature @ write. While data retention and Erase/Write endurance improves at lower die temperature I do not have the details for temperature other than 150C.