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TPS25980: TPS25980 internal MOSFET SOA info

Hollis Liu
Intellectual 2595 points
Part Number: TPS25980

Hi team,

Can we provide the TPS25980 internal MOSFET SOA info? Customer wants to know that to evaluate whether there is potential issue when power-into-short event happens . Thanks.

  • 0
    TI__Guru 57737 points

    Please refer this application note for detailed understanding. 

    Built-in Thermal Protection circuit in eFuse ensures FET operation within SOA

    • The internal FET of the eFuse devices are stressed under conditions like startup into capacitive load, limiting Over Current, startup into output short circuit. It is important that the internal FET is not stressed beyond the SOA limits of the FET during stressful conditions so as to avoid any damage to the FET.
    • Over Temperature Protection (TSD) scheme is implemented in TI’s eFuse to ensure the FET is not stressed beyond its SOA limits. During stressful events there would power loss across the FET which increases the junction temperature of the eFuse. The eFuse is turned OFF when the junction exceeds the thermal shutdown threshold to protect the FET. For example, the Thermal Shutdown threshold for TPS25980 is at 150ᵒC.

    • Figure below shows Over-temperature Protection scheme turn OFF the IC to protect the FET in ‘Wake Up With Output Short to GND’ condition.

    • To verify the robustness of our thermal protection scheme during startup in the worst case condition, wake up into short test is performed a million times.
    • TI guarantees the functionalities of the eFuse and its internal FET (by operated within its SOA) as long as the device is operated within its Recommended Operating Conditions.