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Dear Expert:
If we need enhance the power rating, shall we use more parallel mosfets in LM5069 solution?
Now we used 4pcs parallel mosfets that are controlled by LM5069.
Could you please suggest the right direction?
Put the series resistor on gate of each mosfet? Or connect all gate together directly?
Which value of gate series resistor is recommend?
Thank you.
Aska
Hi Aska,
Thanks for reaching out!
Can you please fill the LM5069 design calculator and send us for review. The design calculator is available under the product folder at ti.com
Yes, we have to use parallel FETs to support higher current by connecting the GATE through a series resistor of 4.7Ohm for each MOSFET.
Best Regards, Rakesh
Dear Rakesh:
Appreciated your reply.
So far the series resistor is 3ohm on my circuit.
In fact, I doesn't understand the calculator in detail. But I tried to fill up it.
Could you please check whether there is any problem?
Thanks.
Hi Aska,
The design fails to meet SOA margin with the selected FET. You need to use stronger SOA MOSFET like PSMN4R8-100BSE. Please modify the design with PSMN4R8-100BSE parameters and send to me for review.
Can you please share the use case of this circuit in your system? Do you need 48V/100A protection solution ?
Best Regards, Rakesh
Dear Rakesh:
Appreciated your reply quickly.
Follow your suggestion, I just got the samples (PSMN4R8-100BSE) today.
Because the input voltage is variable from 48V to 30V, the input current shall be 70A to 100A max. But it is only 6~7 minutes run time (from min current to max current).
So the run time of 100A shall be 10 ~ 20 seconds.
Could you please help to review the file before I test new mosfet?
Thank you so much.
Hi Aska,
Understood.
But 10-20 seconds is still to be considered as DC for FET.
Please use the parameters as per the attached design sheet.
2117.LM5069_Design_Calculator_REV_C.xlsx
Best Regards, Rakesh
Dear Rakesh:
I will follow your suggestion (6pcs parallel).
Thanks for your reply.
BR,
Aska