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BQ40Z80: Maximum source / sink current for BQ40Z80

zdzdzd ergerg
Prodigy 50 points
Part Number: BQ40Z80

Heya,

We need to use a parrallel NMOS configuration CHARGE / DISCHARGE for an application in transport industry.

I tried to search the maximum source / sink current for the NMOS charge pump with no success.

The NMOS we use for the CHARGE channel got 12nFx10 = 120 nF of gate charge capacitance.

Could this gate charge capacitance be a problem for short circuit protection ?

Do we need to use some bipolar totem-pole system to drive the NMOS gates or is the BQ40Z80 able to drive such loads without compromising the integrity of the short circuit protection ?

Best regards,

CD

  • 0
    TI__Genius 10370 points

    CD,

    I suspect the drive strength wont be enough for something you are looking for It can be calculated from the rise and fall times within the datasheet (copied below). We have the rise and fall times at specific load capacitances and voltages, which means the approximate output current can be calculated to derive rise/fall times with a different load capacitances. The datasheet also specs rise/fall times at 4 nF cap, so you can scale those numbers by 30x with a 120 nF load cap

    We do have another family of products which we call Monitors which could be suitable for the application that have a much stronger drive strength.  Here is the link for one of those devices just in case. https://www.ti.com/product/BQ76930 

    Thanks,

    Eric Vos