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CSD18510Q5B: How to more accurately predict the Reverse Recovery losses in FETs/Diodes

Part Number: CSD18510Q5B


I'm trying to predict the losses in DC-DC converters using only datasheet information where possible. One of the parameters that I haven't had much luck with is the Qrr/Trr related losses.

In most datasheets, the Qrr losses are only specified for one operating condition, but from some of your training material ( ) and other research papers, these losses can vary a lot with changes to di/dt, forward current before reverse recovery and temperature.

My question is: Is there any equation that you can apply to datasheet Qrr/Trr parameters to correct for different operating conditions? For example, if my application the di/dt is closer to 1000A/us, rather than the 300A/us specified in the CSD18510Q5B datasheet (a random FET I chose), is there a scaling factor I can apply? How to scale for different di/dt and I_F would be what I'm looking for mainly.

Kind regards,

Oisin Anderson