Leakage current of anti-serially switched p-channel MOSFETs

Hello Yun Fang,

Thanks for your interest in TI FETs. Anti-serial or back-to-back FETs will have similar leakage characteristics as a single FET. Back-to-back FETs in a common drain or common source configuration prevent reverse current flow thru the body diode when the FETs are off. Depending on the voltage polarity, one body diode will conduct while the other is reverse biased only conducting leakage current of a single FET. Since the gates of the FETs are independent, the gate-source leakage can be treated separately. TI makes dual N-channel (independent, common source and common drain) and dual P-channel (common source) devices. I am including links below to a list of our dual FETs. Please note, some of these devices include single-ended (low leakage), back-to-back (higher leakage) or no (low leakage) gate ESD protection. I've also included a link describing the ESD structures used in TI FETs.

https://www.ti.com/power-management/mosfets/n-channel-transistors/products.html#p1143=Dual;Dual%20Common%20Drain;Dual%20Common%20Source

https://www.ti.com/power-management/mosfets/p-channel-transistors/products.html#p1143=Dual%20Common%20Source

https://e2e.ti.com/blogs_/b/powerhouse/posts/what-type-of-esd-protection-does-your-mosfet-include

Best Regards,

John Wallace

TI FET Applications