In a relatively low switching speed half- bridge application is it possible to increase the value of Rt to 200k or more to get additional margin against shoot-through in the MOSFETs? The data sheet recommends a value of 10k to 100k.
Thanks.
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In a relatively low switching speed half- bridge application is it possible to increase the value of Rt to 200k or more to get additional margin against shoot-through in the MOSFETs? The data sheet recommends a value of 10k to 100k.
Thanks.