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Need to use a MOSFET in Tina-Ti.

Oscar Larsson
Prodigy 80 points
Other Parts Discussed in Thread: TINA-TI

I'm trying to do some simulations in Tina-TI for this reference design that I'm using: http://www.ti.com/lit/df/slur512/slur512.pdf

But I'm not sure how to use the MOSFET FDS2670 in the schematic on the second page (Q5, Q9, Q13). What parameters are important to get right?

The datasheet for the MOSFET is this: https://www.fairchildsemi.com/ds/FD/FDS2670.pdf

I have seen similar MOSFET in some other reference designs that can be downloaded from Ti.com but those cant be copy/pasted, any idea why this is?

  • 0
    TI__Mastermind 41310 points

    Oscar,

    TINA-TI can import the spice model for the FDS2670. Since Fairchild manufactures the device, the best place to find the model is Fairchild's website. Once you have obtained the spice model, use the New Macro Wizard to import the device. This is found under the Tools Menu in TINA-TI. Simply name the macro and associate it to the spice model file that Fairchild has for the device:

    Click the next button. In this case, Fairchild has chosen a 4 terminal device with one terminal being dedicated to the temperature (VTEMP, pin 50). Select the Auto generate shape option:

    The model file tells us that pin 20 is the drain, pin 10 is the gate, and pin 30 is the source. Node 50 needs to be tied to a voltage source that represents the temperature (25V equals 25C). I have simulated the device at 25C and it appears to match Fairchild's datasheet curve, however, I cannot guarantee the accuracy of any model that TI did not create.

    Please see the attached .TSM file. You can use it via the Insert--> Macro feature in TINA-TI.

    Britt

    2248.FDS2670.TSM

  • 0 in reply to Britt Brooks - Online Design Tools
    Prodigy 80 points

    Thanks a lot, that really helped me. Now I just need to know the load of the LED lamp that I'm going to use to get a proper simulation. I hope I have understand the reference design right when I skipped the 5-pin header for the simulation.