Other Parts Discussed in Thread: TINA-TI
Tool/software: TINA-TI or Spice Models
Hi everyone,
how I can import models for ECH8654/ECH8667 MOSFET in TINA.-TI?
There isn't SUBCKT directive, but only MODEL one.
Thank you.
Regards,
Michele
********************** ECH8654 SPICE PARAMETER *************************
.LIB ECH8654
* DATE : 2007/10/29
* Temp = 27 deg
* W = 1494310 E-6 m
* L = 1.0 E-6 m
* AD = 1494310 E-12 m2
* RG = 15 ohm
* RB = 0.013 ohm
.MODEL ECH8654 PMOS ( LEVEL = 8
+VERSION = 3.2 TNOM = 27 TOX = 2.7E-08
+VTH0 = -0.91 K1 = 1.96 K2 = -0.04
+NLX = 3.20E-07 DVT0 = 1.12 DVT1 = 0.22
+DVT2 = -0.01 U0 = 300 UA = 1.10E-10
+UB = 1.00E-21 VSAT = 1.86E04 A0 = 0.44
+AGS = 1.00 A1 = 0 A2 = 1
+RDSW = 2.96E03 PRWG = -0.011 WR = 0.83
+WINT = 0 LINT = 2.09E-09 VOFF = -0.10
+NFACTOR = 1.118 CIT = 0 CDSC = 2.40E-04
+CDSCD = 0 ETA0 = 0.08 DSUB = 0.96
+PCLM = 1.40 PDIBLC1 = 0.05 PDIBLC2 = 6.50E-03
+DROUT = 0.96 PSCBE1 = 1.40E09 PSCBE2 = 1.00E-05
+PVAG = 0.01 DELTA = 0.10 NGATE = 1.0E19
+MOBMOD = 1 NQSMOD = 0 NOIMOD = 1
+CAPMOD = 3 XPART = 0.5 CGSO = 9.00E-11
+CGDO = 1.50E-11 CGBO = 0 CGSL = 0
+CGDL = 3.90E-10 CKAPPA = 1.20 CF = 0
+CLC = 3.0E-09 CLE = 0.8 DWC = 0
+DLC = 1.90E-07 NOFF = 3.66 VOFFCV = -0.40
+ACDE = 1.0 MOIN = 15 CJ = 2.20E-04
+MJ = 0.60 PB = 0.41 JS = 1.50E-07
+NJ = 1.00 XTI = 3.0 IJTH = 0
+KT1 = -0.45 UTE = -0.3 PRT = 5.00E03
+AT = 2.5E04 )
*
.ENDL ECH8654
* Device Expression Example
* Electrode = Drain Gate Source
* Mxxx Drain Gin Source Body ECH8654 W=1494310E-6 L=1.0E-6 AD=1494310E-12
* RG Gate Gin 15
* RB Body Source 0.013
* Information herein is for example only;
* it is not guaranteed for volume production.
* ON Semiconductor
************************* ECH8667 SPICE PARAMETER ****************************
.LIB ECH8667
* DATE : 2011/09/15
* Temp = 27 deg
* W = 1494310 E-6 m
* L = 1.0 E-6 m
* AD = 1494310 E-12 m2
* RG = 10 ohm
* RB = 0.01 ohm
.MODEL ECH8667 PMOS ( LEVEL = 8
+VERSION = 3.2 TNOM = 27 TOX = 6.0E-08
+VTH0 = -1.86 K1 = 3.12 K2 = -0.04
+NLX = 1.70E-07 DVT0 = 1.12 DVT1 = 0.38
+DVT2 = -0.01 U0 = 230 UA = 8.00E-10
+UB = 1.00E-21 VSAT = 1.25E05 A0 = 0.18
+AGS = 0.84 A1 = 0 A2 = 1
+RDSW = 8.70E05 PRWG = -5.0E-03 WR = 1.22
+WINT = 0 LINT = 8.00E-08 VOFF = -0.15
+NFACTOR = 0.64 CIT = 0 CDSC = 2.40E-04
+CDSCD = 0 ETA0 = 0.74 DSUB = 0.96
+PCLM = 0.01 PDIBLC1 = 0.00 PDIBLC2 = 1.00E-05
+DROUT = 0.96 PSCBE1 = 1.60E09 PSCBE2 = 2.75E-05
+PVAG = 0.01 DELTA = 0.024 NGATE = 1.0E19
+MOBMOD = 1 NQSMOD = 0 NOIMOD = 1
+CAPMOD = 3 XPART = 0.5 CGSO = 1.00E-12
+CGDO = 2.15E-11 CGBO = 0 CGSL = 0
+CGDL = 2.20E-10 CKAPPA = 2.20 CF = 0
+CLC = 3.0E-09 CLE = 0.8 DWC = 0
+DLC = -1.00E-12 NOFF = 0.5 VOFFCV = -0.01
+ACDE = 1.0 MOIN = 15 CJ = 1.20E-04
+MJ = 0.57 PB = 0.68 JS = 5.00E-07
+NJ = 1.05 XTI = 3.0 IJTH = 0
+KT1 = -0.5 UTE = -0.5 PRT = 8.70E05
+AT = 3.3E04 )
*
.ENDL ECH8667
* Device Expression Example
* Electrode = Drain Gate Source
* Mxxx Drain Gin Source Body ECH8667 W=1494310E-6 L=1.0E-6 AD=1494310E-12
* RG Gate Gin 10
* RB Body Source 0.01
* Information herein is for example only;
* it is not guaranteed for volume production.
* ON Semiconductor
