Hi, I have read application notes and other resources from TI about Bidirectional Power Switches with MOSFETs but a significant question remains open.
I am developing a BMS and my question is aimed at the schematics of the TIDA-00449. Screenshot below.
The current will always pass through the body diode of a MOSFET. Will that not lead to a voltage drop of appx 0.7 V or more across the mosfet, thus a powerloss of I * U? The TIDA-00449 is rated at 50 amps continuous. The current flows through 2 FETs in Parallel. That would result in a power dissipation of 0.7V * 25A = 17.5 W per MOSFET. Is the switch really this inefficient or am I missing something? I hope for clarification.
Best regards, Csongor Griff
