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CC1310: How to use recharge algorithm to maintain high power VDDR when CC1310 work in standby mode

Part Number: CC1310


Tool/software:

Dear TI expert,

When i use CC1310 work in standyby mode , the VDDR decouple capacitor is 10uF,VDDR volatge will be subjected to external electromagnetic interference, and the voltage will drop to 0V , the MCU is died ,need to reset .

So i test the VDDR may max output 50uA in standby mode , when the load is over 50uA ,the VDDR will be drop to 0V ,and the MCU is died.

The VDR voltage started to fluctuate, and when I increased the load by 50uA.

When the current is over 50uA, the VDDR voltage is drop to 0V .

So ,if i want to improve the VDDR load current ,I think it's more resistant to interference.

how to set the VDDR register? Could you help to provide how to set C2 [23:20],C1[19:16],MAX_PER_M [15:11],MAX_PER_E [10:8],PER_M[7:3],PER_E[2:0]?

Thank you very much.

寄存器(RECHARGECFG)

参数值

描述

ADAPTIVE_EN [31]

1

Enable adaptive recharge

C2 [23:20]

0x0A(TI 默认值)

Gain factor for adaptive recharge algorithm

period_new=period * ( 1+/-(2^-C1+2^-C2) )

Valid values for C2 is 2 to 10

C1[19:16]

0x04(TI 默认值)

Gain factor for adaptive recharge algorithm

period_new=period * ( 1+/-(2^-C1+2^-C2) )

Valid values for C1 is 1 to 10

MAX_PER_M [15:11]

0x1C(TI 默认值)

This register defines the maximum period that the recharge algorithm can take, i.e. it defines the maximum number of cycles between 2 recharges.

The maximum number of cycles is specified with a 5 bit mantissa and 3 bit exponent:

MAXCYCLES=(MAX_PER_M*16+15)*2^MAX_PER_E

This field sets the mantissa of MAXCYCLES

MAX_PER_E [10:8]

0x07(TI 默认值)

This register defines the maximum period that the recharge

algorithm can take, i.e. it defines the maximum number of cycles

between 2 recharges.

The maximum number of cycles is specified with a 5 bit mantissa

and 3 bit exponent:

MAXCYCLES=(MAX_PER_M*16+15)*2^MAX_PER_E

This field sets the exponent MAXCYCLES

PER_M[7:3]

依据MCU芯片出厂参数设置计算

Number of 32 KHz clocks between activation of recharge controller

For recharge algorithm, PERIOD is the initial period when entering

powerdown mode. The adaptive recharge algorithm will not change

this register

PERIOD will effectively be a 16 bit value coded in a 5 bit mantissa

and 3 bit exponent:

This field sets the Mantissa of the Period.

PERIOD=(PER_M*16+15)*2^PER_E

PER_E[2:0]

依据MCU芯片出厂参数设置计算

  • When i use CC1310 work in standyby mode , the VDDR decouple capacitor is 10uF,VDDR volatge will be subjected to external electromagnetic interference, and the voltage will drop to 0V , the MCU is died ,need to reset .

    The ref design has 22 uF on VDDR, any reason to deviate?

    Not clear from the description, does this happen only if the device is subjected the a field?

    "So i test the VDDR may max output 50uA in standby mode"

    Please elaborate. You can't draw extra current from the VDDR node beyond what the CC1310 draws in standby. It's unclear how you test.  

  • TheVDDR ref design 22uf for DC-DC , i choose LDO mode , the VDDR ref design cap is 10uF.

    Because I suspect that VDDR is subject to electromagnetic interference, the transient corresponding speed of the power supply is not enough, resulting in voltage fluctuations, so I tested the output current capability of VDDR.