Working on CC2530 with Z-Stack 2.3.0, I would like to increase the NV Memory available from 6 nv pages to 60 nv pages...
I wonder if it is possible knowing that the code memory is 130 529 bytes and I used CC2530 with 256 KB. From what I undersand it remains 125 KB (at least 60 NV pages)
In hal_board_cfg.h : i set :
HAL_NV_PAGE_CNT = 60
I have also modified the link file f8w2520.xcl :
-D_ZIGNV_ADDRESS_SPACE_START=(((_NR_OF_BANKS+1)*_FIRST_BANK_ADR)-0x1E800)
-D_ZIGNV_ADDRESS_SPACE_END=(_ZIGNV_ADDRESS_SPACE_START+0x1E000)
60 * 2048 = 0x1E000
1. I have a compilation issue in OSAL_Nv.c telling me that this following variable is out of range...
uint8 _nvBuf[OSAL_NV_PAGES_USED * OSAL_NV_PAGE_SIZE];
Should it be possible to use the OSAL NV management functions adding new NV pages or should we manage to read & write using HalFlash.c methods?
2. Looking at the .map file, I don't understand why the last bank used is Bank 3 (0x38000 - 0x3FFFF) whereas this flash memory could have 7 banks...
ZIGNV_ADDRESS_SPACE CODE 0003C800 - 0003F7FF 3000 rel 0
IEEE_ADDRESS_SPACE CODE 0003FFE8 - 0003FFEF 8 rel 0
REGISTERS DATA 00000000 - 00000007 8 rel 0
Thanks!