Hi,
one thing that confuses me is the crystal specification parameters in the datasheet "SWRS081B –APRIL 2009–REVISED FEBRUARY 2011".
AFAIK, Cl is the load capacitance that a specific crystal is designed for. So when I choose a crystal, I need to combine it with two capacitors to meet its desired Cl, using the formula
Cl = (C1 * C2) / (C1 + C2) + Cstray
Therefore, it seems very strange to me that TI present a range for Cl from 10 to 16 pF. I've never seen this in other MCU datasheets.
However, the datasheet says "Measured on Texas Instruments CC2530 EM reference design with TA = 25°C and VDD = 3 V, unless otherwise noted".
But what would make more sense is to present the parasitic capacitance on the XTAL pins.
Am I totally wrong, or do you agree with me?
Best regards.