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TAS2563: Inrush current of internal boost circuits at using Internal Boost

Part Number: TAS2563

Tool/software:

Please see the below schematics.
PVDD's Capacitance is very higher capacitance (220uF+10uF+22uF+ etc..) 
the AMP IC's boost mode is "alway boost mode"   Boost Voltage is 11V.   


During production, a defect often occurs in which the VBST output (internal Boost circuit) of the AMP IC does not output.

Could it be that the internal Boost circuit is destroyed due to a momentary inrush current occurring because the capacitance of the PVDD(VBST) decoupling capacitor is too large?

So, to reduce the inrush current, I'm thinking of adding a D401 (Schottky Diode). 

  • Hi Lee,

    Is it not possible to reduce the PVDD capacitance instead? Have you tried that already?
    The integrated boost controller is expecting some inductance and capacitance for stability considerations, so it would be best to use the recommended value of around 20uF.

    Please note the integrated boost should be used to power only TAS2563 amplifier, it's not recommended to use this boost to power other devices/circuits.

    Best regards,
    -Ivan Salazar
    Applications Engineer

  • Thank you for your reply.... 

    My reply :  integrated boost is used to power only TAS2563 amplifier.  

    My additional Question :

    #1 : PVDD Capacitance  is  increases (220uF over 20uF), can the inrush current be exceeded even when using the internal Boost?
    Because  TI's Technical Note described  that D1 (schottky diode) inside the EVM is not Mandatory , it is necessary when using the External Boost. 

  • Hi Lee,

    You can try adding the Schottky diode, it won't harm, and it may help with the inrush current, but I can't say if it'll fix the problem as it's not the conventional implementation.
    I would still suggest to test reducing the capacitance.

    Best regards,
    -Ivan Salazar
    Applications Engineer