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TPD1E10B06: TPD1E10B06

Part Number: TPD1E10B06

Hi ,

Im doing reliability analysis for our project. Need to calculation operating /junction temperature of the device.

Considering TA-65C

Rja-615C/W

Ipp=1A

VC=7.38V  VCLAMP=(VBREAKDOWN+IPP*RDYN)

Ppp=7.38W

with above consideration the junction temperature is 4538,which is unrealistic.Can you please help to correct the issue

  • Hi Subathra,

    The formula for junction temperature is Tj = TA + RθJA * PDEV, where:

    Tj = junction temperature

    TA = ambient temperature

    RθJA = thermal resistance from junction to ambient

    PDEV = power consumed by device

    PDEV will be equal to the breakdown voltage (Vb) times the current at the breakdown voltage (1 mA = Ib)

    Vb for TPD1E10B06 is 6V, meaning PDEV = 6 V * 0.001 A = 0.006 W

    RθJA  = 615.5 C/W

    RθJA * PDEV = 615.5 C/W * 0.006 W = 3.693 C

    Therefore, Tj = TA + 3.693, meaning Tj = 65 + 3.693 -> Tj = 68.693.

    In addition, the datasheet specifies the operating and storage temperature ranges for this diode, shown below:

    Please let me know if you have any questions!

    Best Regards,

    Josh Prushing