DS90C032QML: DS90C032QML Displacement Damage report/ characteristics?

John Brunn

Part Number: DS90C032QML

Tool/software:

I am documenting some radiation effects on my flight design and need assistance with displacement damage assessment of a few parts. Is there any data available on the following parts? If not, can you tell me if the device is inherently immune to displacement damage due to its structure. CMOS, Bipolar, MOS.

5962L9583401VFA DS90C032WLQMLV

5962R9583301VFA DS90C031W-QMLV

8 months ago

0 Amy 8 months ago

TI__Genius 15321 points

Hi John,

This device has this corresponding documentation: 1) DS90C032xLQMLV SEE Report (ti.com) and 2) DS90C032xLQMLV TID Report

These would be the resources that would have the data if this type of assessment was conducted.

Regards, Amy

0 John Brunn 8 months ago in reply to Amy

Prodigy 10 points

I am aware of these reports. They do not answer my questions. Displacement damage is tested with neutron irradiation.

0 Amy 8 months ago in reply to John Brunn

TI__Genius 15321 points

Hi John,

In recent years TI has begun to test displacement damage on all new products. However, this is an older device. If the report doesn't exist it is not likely it was tested.

Regards, Amy

0 John Brunn 8 months ago in reply to Amy

Prodigy 10 points

Amy,

From what I have been told by radiation effects engineers, CMOS devices are inherently less susceptible to displacement damage effects.

Thanks for your assistance.

Regards, John

0 Amy 8 months ago in reply to John Brunn

TI__Genius 15321 points

Hi John,

Thank you, please reach out for any other questions! -Amy

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DS90C032QML: DS90C032QML Displacement Damage report/ characteristics?