DS90UB964-Q1: If I replace 964 with 962, can softawre remain unchanged?

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Here is the English translation of the provided text and documents you shared:

### 1. Digi-Key Certificate of Compliance (COC)

**CERTIFICATE OF COMPLIANCE**
www.digikey.com
Orders 1-800-344-4539 / 1-218-681-6674
Fax 1-218-681-3380

701 Brooks Ave. South, P.O. Box 677, Thief River Falls, MN 56701-0677 USA

**Sold To:** [Redacted area]
**Ship To:** [Redacted area]

**Salesorder:** 4574
**Invoice:** 342
**Customer:** 167N [redacted]
**Purchase Order:** 183648
**Date:** 28-AUG-2024
**Page:** 24

**Quantity:** 10000
**Item Number/Information:** IPP80N04S4L04AKSA1-ND
**Manufacturer:** Infineon Technologies
**Date/Lot Code:** 2415

The Digi-Key or supplier direct ship products included in the above shipment were purchased from the original manufacturer or through the manufacturer's authorized distribution. The original manufacturer warrants and certifies that the products they produce meet their specifications. Test reports (chemical, physical, electrical, etc.) supporting the certification are on file (either at Digi-Key, the supplier, or the plant of the manufacturer) and will be made available upon request. This document is evidence of Conformity that this shipment meets the requirements of Digi-Key's Quality Management System and/or Purchase Order requirements agreed between the customer and Digi-Key.

This certification is valid only to the original customer and is not transferable.

If you have any questions, please contact Customer Service 800-858-3616.

**Signature:**
Marie Sander
Marie Sander, Customer Service Manager

**Date code format key:** MMM-YYYY, YYYYMMDD, YYWW etc. (various formats listed)

### 2. VBSEMI IPP80N04S4L-04-VB Datasheet (English Version)

**IPP80N04S4L-04-VB Datasheet**
N-Channel 40-V (D-S) MOSFET
www.vbsemi.com

**PRODUCT SUMMARY**
V_DS: 40 V
R_DS(on) V_GS = 10 V: 5 mΩ (typ)
I_D: 110 A
Configuration: Single
Package: TO-220AB

**FEATURES**
- Trench Power MOSFET
- 100% R_g and UIS Tested
- RoHS Compliant

**APPLICATIONS**
- Synchronous Rectification
- Power Supplies

**ABSOLUTE MAXIMUM RATINGS** (T_A = 25 °C, unless otherwise noted)

| Parameter | Symbol | Limit | Unit |
|----------------------------------------|--------|----------|------|
| Drain-Source Voltage | V_DS | 40 | V |
| Gate-Source Voltage | V_GS | ±20 | V |
| Continuous Drain Current (T_J = 175 °C) T_C = 25 °C | I_D | 110 (a,c)| A |
| T_C = 70 °C | | 90 (c) | A |
| T_A = 25 °C | | 31 (b) | A |
| T_A = 70 °C | | 25 (b) | A |
| Pulsed Drain Current | I_DM | 270 | A |
| Avalanche Current Pulse | I_AS | 85 | A |
| Single Pulse Avalanche Energy | E_AS | 320 | mJ |
| Continuous Source-Drain Diode Current T_C = 25 °C | I_S | 110 (a,c)| A |
| T_A = 25 °C | | 2.6 (b) | A |
| Maximum Power Dissipation T_C = 25 °C | P_D | 312 (a) | W |
| T_C = 70 °C | | 200 | W |
| T_A = 25 °C | | 3.13 (b) | W |
| T_A = 70 °C | | 2.0 (b) | W |
| Operating Junction and Storage Temperature Range | T_J, T_stg | -55 to 150 | °C |

**THERMAL RESISTANCE RATINGS**

| Parameter | Symbol | Typical | Maximum | Unit |
|----------------------------------------|--------|---------|---------|-------|
| Maximum Junction-to-Ambient (Steady State) | R_thJA | 32 | 40 | °C/W |
| Maximum Junction-to-Case (Steady State) | R_thJC | 0.33 | 0.4 | °C/W |

**SPECIFICATIONS** (T_J = 25 °C, unless otherwise noted)

**Static**
- V_DS: Drain-Source Breakdown Voltage → V_GS = 0 V, I_D = 250 µA → Min 40, Typ 41, Max — V
- ΔV_DS/T_J: V_DS Temperature Coefficient → I_D = 250 µA → — 41 — mV/°C
- V_GS(th): Gate-Source Threshold Voltage → V_DS = V_GS, I_D = 250 µA → Min 1.2, Typ — , Max 2.5 V
- I_GSS: Gate-Source Leakage → V_DS = 0 V, V_GS = ±20 V → — — ±100 nA
- I_DSS: Zero Gate Voltage Drain Current → V_DS = 40 V, V_GS = 0 V → — — 1 µA
→ V_DS = 40 V, V_GS = 0 V, T_J = 55 °C → — — 10 µA
- I_D(on): On-State Drain Current → V_DS ≥ 5 V, V_GS = 10 V → Min 120 — — A
- R_DS(on): Drain-Source On-State Resistance → V_GS = 10 V, I_D = 30 A → — 6 — mΩ
→ V_GS = 4.5 V, I_D = 20 A → — 7 — mΩ
- g_fs: Forward Transconductance → V_DS = 15 V, I_D = 30 A → — 180 — S

**Dynamic** (V_DS = 20 V, V_GS = 0 V, f = 1 MHz)
- C_iss: Input Capacitance → — 2900 — pF
- C_oss: Output Capacitance → — 750 — pF
- C_rss: Reverse Transfer Capacitance → — 310 — pF
- Q_g: Total Gate Charge → V_DS = 20 V, V_GS = 10 V, I_D = 20 A → — 130 — nC
- Q_gs: Gate-Source Charge → — 20 — nC
- Q_gd: Gate-Drain Charge → — 32 — nC
- R_g: Gate Resistance → f = 1 MHz → — 0.85 1.3 Ω

**Switching Times** (various test conditions listed, e.g., turn-on delay, rise time, etc.)

**Body Diode Characteristics**
- I_S: Continuous Source-Drain Diode Current → T_C = 25 °C → — — 110 A
- I_SM: Pulse Diode Forward Current → — — 200 A
- V_SD: Body Diode Voltage → I_S = 20 A → — 0.8 1.2 V
- t_rr: Body Diode Reverse Recovery Time → — 50 75 ns
- Q_rr: Body Diode Reverse Recovery Charge → I_F = 20 A, di/dt = 100 A/µs, T_J = 25 °C → — 70 105 nC

### 3. Generic NMOS 120A 40V Datasheet

**NMOS 120A 40V**

**Description:**
This N-Channel MOSFET uses advanced trench technology and design to provide excellent R_DS(on) with low gate charge.
It can be used in a wide variety of applications.

**Features:**
1) V_DS = 40V, I_D = 120A, R_DS(on) < 4mΩ @ V_GS = 10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell density trench technology for ultra R_DS(on).
5) Excellent package for good heat dissipation.

**Absolute Maximum Ratings** (T_C = 25°C unless otherwise noted):

| Symbol | Parameter | Ratings | Units |
|------------|----------------------------------------|---------|-------|
| V_DS | Drain-Source Voltage | 40 | V |
| V_GS | Gate-Source Voltage | ±20 | V |
| I_D | Continuous Drain Current | 120 | A |
| I_D | Continuous Drain Current (T_C=100°C) | 85 | A |
| I_DM | Pulsed Drain Current | 330 | A |
| E_AS | Single Pulse Avalanche Energy | 1080 | mJ |
| P_D | Power Dissipation | 130 | W |
| T_J, T_STG| Operating and Storage Junction Temperature Range | -55 to +175 | °C |

**Thermal Characteristics:**

| Symbol | Parameter | Max | Units |
|----------|------------------------------------------------|--------|--------|
| R_θJC | Thermal Resistance, Junction to Case | 1.15 | °C/W |
| R_θJA | Thermal Resistance, Junction to Ambient | — | °C/W |

**Electrical Characteristics** (T_C = 25°C unless otherwise noted):

**Off Characteristics**
- BV_DSS: Drain-Source Breakdown Voltage → Min 40, Typ 45, Max — V
- I_DSS: Zero Gate Voltage Drain Current → Max 1 µA
- I_GSS: Gate-Source Leakage Current → Max ±100 nA

**On Characteristics**
- V_GS(th): Gate-Source Threshold Voltage → Min 1.2, Typ 1.9, Max 2.5 V
- R_DS(on): Drain-Source On Resistance → V_GS=10V, I_D=20A → Typ 3.2, Max 4 mΩ
→ V_GS=4.5V, I_D=10A → Typ 5.5, Max 6 mΩ
- G_fs: Forward Transconductance → Min 26 S

**Dynamic Characteristics**
- C_iss: Input Capacitance → Typ 5400 pF
- C_oss: Output Capacitance → Typ 970 pF
- C_rss: Reverse Transfer Capacitance → Typ 380 pF

**Switching Characteristics**
- t_d(on): Turn-On Delay Time → Typ 15 ns
- t_r: Rise Time → Typ 18 ns
- t_d(off): Turn-Off Delay Time → Typ 52 ns
- t_f: Fall Time → Typ 23 ns
- Q_g: Total Gate Charge → Typ 75 nC
- Q_gs: Gate-Source Charge → Typ 10.5 nC
- Q_gd: Gate-Drain "Miller" Charge → Typ 17 nC

**Drain-Source Diode Characteristics**
- V_SD: Source-Drain Diode Forward Voltage → Max 1.2 V
- I_S: Diode Forward Current → Max 120 A
- T_rr: Reverse Recovery Time → Typ 42 ns
- Q_rr: Reverse Recovery Charge → Typ 45 nC

Alternatively, you can visit www.aceicc.com and seek their advice; I got a good answer from them last time.

If you need any part further translated, rephrased, or explained in more detail, just let me know!

DS90UB964  $12

Hello Justin,

Thanks for your reply!

Sorry, I might have expressed it incorrectly. I want to change 962 to 964.

The serializers in used is DS90UB913, and only 1 CSI output port is used.

The usage is as follows:

DS90UB913*4--->DS90UB962 (will be changed to DS90UB964)---> only one CSI output

The incoming and output data of the deserializer are exactly the same. In this case, does the software need to be changed? Can we just use the original 962 software on the 964?

Thanks.