Part Number: DP83826E
Hi team,
I see several discrepancies between the DP83826ERHBR datasheet and SNLA344A:
- Center-tap decoupling (primary side): Datasheet 2 nF vs. app note 0.1 µF ∥ 1 µF.
- PHY–magnetics pins (TD_P, TD_M, RD_P, RD_M): App note adds 4.7 µF to GND on each line. Not present in datasheet.
- CEXT (PHY external cap): Datasheet 2 nF vs. app note 2.2 µF ∥ 0.1 µF.
Could you please advise:
- Which values are recommended for a standard 10/100BASE‑TX design?
- Rationale for the larger µF capacitors (EMI/EMC, ESD/EFT robustness, magnetics choice, layout)?
- Impact on performance if we adopt the larger caps (radiated/common‑mode noise, link timing/settling, SI/return loss)?
- Any updated collateral/errata that supersedes either document?
Context: DP83826ERHBR, CAT‑5e, center‑tap to 3.3 V via choke, 4‑layer PCB. We can share the magnetics P/N and schematic if helpful.
