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Original question:

TPD2E001: Alternate part

TPD2E2U06: Electrical differences between TPD2E001DRLR and TPD2E2U06DRLR

R.Fukunaga
Expert 2785 points

Part Number: TPD2E2U06
Other Parts Discussed in Thread: STRIKE

Hi TI Team,

We plan to replace TPD2E001DRLR to TPD2E2U06DRLR.

Could you clarify the key electrical differences?

  • What is TPD2E2U06 CIO (channel input capacitance to GND) typ/max and test conditions? The datasheet shows CCROSS = 0.02 pF, but I need CIO.
  • Please confirm CCROSS is only channel-to-channel coupling (not input capacitance).
  • How do their clamping characteristics compare (IEC 61000-4-2; TLP/VF‑TLP or dynamic resistance)?
  • Any differences in surge rating (IEC 61000-4-5) and leakage current?

Best Regards,

Ryusuke

  • 0
    TI__Intellectual 2640 points

    Hi R Fukunaga,

    This would be Line capacitance which is what actually matters in the system design. We have 1.5pF for typical and 1.9pF max. Test condition: f = 1 MHz, VBIAS = 2.5V, 25 degrees C.

    CCROSS is only channel to channel capacitance no channel to GND.

    TLP can be used to characterize the diodes IV curve during an ESD strike. TLP is useful because it has similar characteristics to an IEC 61000-4-2 ESD Strike. Thus you can correlate TLP current with IEC ESD. Also, the TLP plot can tell you the clamping voltage for a specific IEC strike. 8kV IEC strike = 16A TLP. 2kV IEC strike = 4A TLP. 4kV IEC strike = 8A TLP. Dynamic resistance is extracted using least squares fit of TLP characteristics between I = 20A and I = 30A. 

    Surge (IEC 61000-4-5) is a different type of test. This one has a longer period and a higher power. Please read the following app note that talks about the different IEC 61000-4-X: Link.

    Best,

    Bryan