Part Number: SN55LVTA4-SEP
for figure 8-4, want to confirm device and placement (don't see device). I think it is >10uF bulk, 1nF at VCC pin, then put 100nF in between?
for figure 8-2, note A says to put the 0.1uF/100nF as close as possible. want to see if this is specific to 5V on diode drop or if figure 8-4 is the way to go. Also, will there be a significant loss in performance if I swap the Z5U/mica/poly dielectric for X7R or C0G?
equations 1 and 2 work out 1nF for the bypass capacitor, should I consider different rise times, worst-case change in supply, or currents?