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TPD6E001 datasheet terms and definition

Mahendra Patel1
Expert 3560 points

Hello,

For each ESD device, I see two parameters mentioned in datasheet,

1. Channel clamp voltage              2. Breakdown voltage

What is the difference between these two terms? How they are defined?

Regards,

Mahendra Patel

  • 0
    TI__Genius 12190 points

    Hi Mahendra,

    Channel clamp voltage is the voltage drop from the IO pin to GND during a transient voltage event as defined in the datasheet TEST CONDITIONS per each specification. For example, when +8 kV is present on an IO pin as defined by the IEC61000-4-2 specification, the voltage from IO to GND is clamped to only 60V.

    Breakdown voltage is the voltage from the IO pin to GND when forcing 10 mA of current from IO to GND. This is typical diode terminology used to describe VZener of a diode, or the reverse breakdown voltage of a Zener diode.

    Regards,