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Basic Question about IO capacitance : TPD4E6B06

Other Parts Discussed in Thread: TPD4E1B06, TPD1E6B06, TPD4E6B06

Hi,

I would like to ask you about IO capacitance of ESD.

For example, TPD4E1B06 has 0.7pF but TPD4E6B06 has 4.8pF, TPD1E6B06 has 6pF.

Could you tell me the reason of the difference between TPD4E1B06 (0.7pF) and TPD4E6B06 (4.8pF)?

Why the value of 1ch is lareger than 4ch's one? (TPD4E6B06 : 4.8pF vs TPD1E6B06 : 6pF)

Thank you in advance.

Best Regards,

  

  • Takumi,

    The differences in these device's capacitance are designed into the die. The reason we design different devices with different capacitance levels are to provide a variety to the industry to meet different types of system requirements. Some systems have higher data rates than others so that they need lower capacitance. Some systems do not have a low capacitance requirement, so that a "larger" (i.e more capacitance) TVS can be used, which likely lowers the clamping voltage during ESD.

    Regards,
  • Hi Guy-san,

    Thank you so much for your reply, I understood!

    Regards,
  • Takumi-san,

    I am glad to be helpful. Please let me know if there is anything else I can help you with. Are you looking for some ESD protection? Please let me know how I can help.

    Kind Regards,
  • Guy-san,

    Thank you for your kindness.

    In fact, my customer is looking for 1ch ESD with low IO capacitance.

    That is to say, like 1ch version of TPD4E1B06.

    I cannot find such kind of ESD in TI portfolio, to my regret.

    If you know anything information, please let me know.

     

    Best Regards,