This thread has been locked.

If you have a related question, please click the "Ask a related question" button in the top right corner. The newly created question will be automatically linked to this question.

DS125BR800A - READ_EN# - tie low or pulse?

Other Parts Discussed in Thread: DS125BR800A

In Table 1 of the Datasheet, the READ_EN# pin is described as needing a high-to-low transition to start the load from the External EEPROM.   Later in the document - section on SMBUS Master Mode - the recommendation is to tie READEN# of the first device to GND.  Which is correct?  

  • Hi Neil,

    A transition from high-to-low will allow you to start an External EEPROM load at the time of your choosing.

    However, if there is no reason to wait for a prior event to occur before loading the EEPROM after power is applied to the DS125BR800A, you can power-up the first DS125BR800A in your EEPROM programming daisy-chain with READEN# tied to GND.

    Regards,

    Michael