TPD4E05U06DQAR / max value of line capacitance

While we cannot guarantee any maximum value for the line capacitance, tests on a similar part have shown a maximum line capacitance of around .65pF. 

Thanks,

Alec

Yaita-san-

it is difficult to say without knowing more about the customers application. The capacitance of the two parts is similar enough that it is not distinguishing. One thing that would concern me about the PUSB3F96 is that it is a deep snapback diode. Snapback diodes generally offer better voltage clamping during an ESD event, but they also can cause a latchup effect where a transient effect turns the diode on, and then it stays on during normal operation and hurts signal quality. With the PUSB3F96 if the customer application uses above 3 or 4 volts there is a good chance of a latchup effect and the PUSB3F96 could hurt rather than help.

Looking at that diode, I would guess it was chosen for the low voltage clamping during an ESD strike. The best option would most likely be to use the TPD4E02B04. It offers a much lower capacitance, nearly as good of clamping voltage with less of a snapback, and an improved ESD rating over the NXP part. This would be the part that I would recommend to replace the PUSB3F96

If the customer is willing to use multiple single devices, one device that is an improvement in almost every aspect is the TPD1E04U04. It has better clamping, higher ESD rating, less of a snapback, and comparable line capacitance.

I'd be happy to offer further support if you have follow up questions, or to give more specific recommendations if you know more about what the customers application is and their priorities in an ESD diode.

Thanks,
Alec