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ISO5852S: MOSFET booster at output

Amtech
Genius 4585 points
Part Number: ISO5852S


ISO5852S has output source current capacity of 2.5A, can we increase output source and sink current capacity using MOSFET booster at output?

In application note for ISO5852 transistor are used for current boosting, this can be used upto 50 kHz switching frequency with peak source and sink current of 50 A?

  • 0
    TI__Genius 13445 points
    Hi Amtech,

    Thanks for your interest in our part, you're correct the source/sink current capability of ISO5852S is 2.5A.

    In order to increase the source/sink current, we typically recommend the BJT buffer stage using an npn/pn pair of transistors at the output of the isolated driver which is simple, low cost. This design is independent of frequency but it is limited to non-inverting configuration which is not compatible with the desaturation fault protection circuitry of the driver as explained in the datasheet.

    The max source/sink current into the IBGT is determined by the ratio of the voltage across the IGBT gate and total resistance on the on/off path).

    The link copied below goes in detail about this topic.

    www.ti.com/.../tiduc70a.pdf

    So far though, I have not come across a design using a MOSFET booster to increase the current capability.

    Can you tell me more about your design? Why are you using a MOSFET booster? Does your system have any limitations with npn/pnp transistor pairs?

    Thanks.

    Regards,

    -Mamadou
  • 0 in reply to Mamadou Diallo
    TI__Genius 13445 points
    Hi Amtech,

    I haven't heard from you. I am going to close this thread.
    If this addressed your concerns, please press the green button or let us know if you need further assistance.

    Thanks.

    Regards,

    -Mamadou