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DP83867ERGZ-R-EVM: DP83867ERGZT latchup

Part Number: DP83867ERGZ-R-EVM
Other Parts Discussed in Thread: DP83867E, STRIKE

Is the DP83867ERGZT susceptible to any type of latchup?

munir

  • Hi Munir,

    The performance of the DP83867E is shown in the datasheet and in the performance of the EVM.

    We test for ESD induced latchup. Latchup does not occur up to 8kV in IEC61000-4-2 ESD testing.

    Best Regards,
  • I am not sure of what ESD induced latchup. Do you mean electrical latchup to 100 or 200 mA?
  • Hi Munir,

    I mean ESD strike model as shown in IEC 61000-4-2 setup. We also perform electrical latchup testing of all of our devices. I would need a few days to get the details on 867.

    Best Regards,
  • Dear Rob,

    ESD testing is performed to test the integrity of the input transistors to transient voltage strikes.  It usually meant to test gate oxides and any PN junction for the strike.  Latch Up as a result of shortening the VDD and ground through a CMOS inverter.  Electrical latch up testing does that, if the part is latchable.  Also radiation such as protons or heavy ions can do that.  Also, FXR dose rate can latch a device only if the inverter is latchable.

    I look forward for any test, electrical latch up or radiation latchup.

    Thanks

    Munir

  • Hi Munir,

    I am aware of the latch-up phenomenon of the parasitic path that can be created between ground and supply.

    We have seen a few mechanisms that can activate this path: radiation, electrical over stress, ESD.

    The ESD can cause ground bounce, or fluctuations of supply voltage, that looks similar to electrical latch-up. I was reporting that effect was not seen.

    The DP83867E, on a component level, has been tested for electrical latchup using JESD78 method, that information is on the qualification page here: www.ti.com/.../home

    Best Regards,