TPD7S019: TPD7S019 BYP pin Question

Hi Chuck,
You pointed out the key point, the fail device is installed the 22uF/6.3V Cap at BYP, but in the TPD7S019 is only 5V, why TPD7S019 will be damage, but not Cap.

Jerry,

The BYP pin will absorb charge from all of the other pins and during the ESD event may exceed 5V for a short period of time. I prefer to use a higher voltage rated cap for this reason. The only reason that I know of that the cap could cause the device to fail is if there is too high of an impedance between the pin and the capacitor.

Are you able to send me the layout of the PCB as a private message so I can take a look at it?

It would also be helpful for me to see your ESD test procedure as well.

I would like to help with your debug as much as possible.

Regards,
Chuck

Hi Chuck,
Thanks very much! My email is jerry.chu@wpi-group.com.

Dear Chuck.

Good day.

I have two question with this is the same case.

May I know the reverse collapse voltage of D1/D3 voltage?

What is the withstand current of D1, D2, and D3? Thanks for kindly help~

Jerry,

I am attempting to get you answers on these questions. The data is not part of the datasheet so if I am able to get access to it, it will take a few days to obtain.

I will update you with what I find out.

Regards,
Chuck

Jerry,

I have finally located a contact on this part and I am reaching out today to get these questions answered. I should have information for you by Thursday at the latest.

Thanks for your patience.

Regards,
Chuck

Jerry,

Here are the questions that I got back to ensure we get you the information that you want?

1. For “reverse collapse voltage,” do they mean reverse breakdown voltage?

2. For withstand current, do they mean forward diode current? And are they interested in DC current, HBM ESD current, or IEC ESD current?

Please answer these and I will work to get you the answers you need.

Regards,
Chuck

Dear Chuck.

Good day.

Reply to your question is as follows. Thanks for kindly help~

1. For “reverse collapse voltage,” do they mean reverse breakdown voltage?

A : Yes

2. For withstand current, do they mean forward diode current? And are they interested in DC current, HBM ESD current, or IEC ESD current

A : We got EOS damage. So we interested in DC forward diode current.

Jerry

Here is the guidance we can provide.  Note that TI cannot recommend any condition beyond the abs max in the datasheet.

• The reverse breakdown of these diodes is on the order of:

o D2, D3   VRB=~12V-14V

o D1         VRB=~7V-8V,  has some snap-back as depicted in Figure 1 of the datasheet.      

• D3 is designed to handle 8kV IEC pulses (~16A at ~30nS pulse) in the forward direction.   Longer pulse data is not available for this device, but similar devices have been tested to withstand ~4A at 20us pulse length.   This diode is not designed for DC forward current.   This diode is not designed to handle any significant current in the reverse direction.

• D1 is designed to handle 8kV IEC pulses (~16A at ~30nS pulse) in both the forward and reverse direction.   Longer pulse data is not available for this device, but similar devices have been tested to withstand ~4A at 20us pulse length.   This diode is not designed for DC forward current.

• D2 is designed to handle 8kV IEC pulses (~16A at ~30nS pulse) in the forward direction.   Longer pulse data is not available for this device, but similar devices have been tested to withstand ~4A at 20us pulse length.   This diode is not designed for DC forward current.   This diode is not designed to handle any significant current in the reverse direction.

If this fully answers your questions, then please click the customer thinks resolved button.

Dear Chuck.
There are no other question at the moment. Thanks for kindly help~