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Original question:

TIOL111: ±1.2 kV/500 Ω IEC 61000-4-5 Surge

TIOL111: ESD - Contact discharge IEC61000-4-2

Shunsuke Nagata
Genius 13060 points
Part Number: TIOL111
Other Parts Discussed in Thread: STRIKE

Hi,

I would like to check Passive level for IEC61000-4-2. The level is +/-4500 V. The meaning of EN=TX=HIGH is turning on low-side FET. Why does the case which turn on low-side FET weak rather than other case? I guess the internal diode may get damage if low side FET turn on? Could you please give me your advice?

Regards,
Nagata.

  • 0
    TI__Guru 62920 points

    Hello Nagata-san,

    Your thinking is correct.  Without this condition, all of the current from the ESD strike will flow through the Zener clamping diodes shown in the figure above.  If the low-side driver is active, though, some of the ESD current may flow through the driver (diode and FET) since this is a low impedance path to ground.  These components are less able to withstand the energy of an IEC ESD strike and would fail sooner than the ESD clamps.

    Please let me know if this is not clear or if you have further questions.

    Regards,
    Max