Other Parts Discussed in Thread: TXB0304, SN74AXC4T774, TXU0304
As communication with the phone, we use TXB0104 to level shift our controller‘s IOs to GDDR6 DRAMs’s JTAG, we found the JTAG link is not stable especially when the G6 IO’s voltage at a certain lower value, and the TCK may inaccuracy triggered by DRAM after catch the wave. As we totally have 12 pcs DRAMs on one daisy chain JTAG, the DRAMs PD resistance become lower.
Some question as below:
Could we just replace TXB0104 by TXB0304, to upgrade the VIH for DRAM will be ok？
Could we add serial R at ls output to lower the ring or overshoot, or ODT at the end ？
Is SN74AXC4T774 more suitable for this application, or some others recommend, or others successfully solution which is similar as our application？
