Part Number: LSF0102
We would like to understand whether TI has any concerns or guidance around the following part potentially experiencing undershoot/data sheet violations?P/N: LSF0102DQER
The data sheet indicates that device reliability may be impacted if the 500mV threshold is exceeded. How does TI see the risk of this threshold being violated?If you could help answer the following questions, that would be great.
- Would a -540mV (for e.g.) undershoot be seen as a reliability concern? Can it damage the drive or the platform? Any supporting data?
- Is the −0.5 V I/O rating a DC absolute maximum, or does it include transient allowance?
- What is the actual failure mechanism at negative I/O excursion? Presumably forward biasing the ESD/substrate diode on the I/O.
Please find some additional details summarized in the table below and a capture of the undershoot and out circuit.
